NTE238 Silicon NPN Transistor Color TV, Horizontal Output
Description: The NTE238 is a silicon NPN horizontal deflection transistor in a TO3 type package designed for use in deflection circuits. Features: D VCEX = 1500V D Safe Operating Area @ 50s = 20A, 400V Absolute Maximum Ratings; Collector-Emitter Voltage, VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current-Continuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Base Current-Continuous, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Emitter Current-Continuous, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25C/W Maximum Lead Temperature (Soldering Purposes, 1/8" from case for 5sec), TL . . . . . . . . . +275C Electrical Characteristics: (TC =+25C unless otherwise specified)
Parameter OFF Characteristics Collector-Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current ON Characteristics (Note 1) Collector-Emitter Saturation Voltage Base Emitter Saturation Voltage SWITCHING CHARACTERISTICS Fall Time tf IC = 5A, IB1 = 1A, LB = 8H - 0.4 1.0 s VCE(sat) VBE(sat) IC = 5A, IB = 1A IC = 5A, IB = 1A - - - - 5.0 1.5 V V VCEO(sus) VC = 50mA, IB = 0 ICES IEBO VCE = 1500V, VBE = 0 VBE = 5V, IC = 0 750 - - - - - - 0.25 0.1 V mA mA Symbol Test Conditions Min Typ Max Unit
Note 1. Pulse test: Pulse Width 300s, Duty Cycle = 2%.
.135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane
.312 (7.93) Min E .215 (5.45)
.040 (1.02) 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes)
.430 (10.92)
.188 (4.8) R Max
.525 (13.35) R Max B C/Case
|
